Kult┼źros naujienos
─«─Śjimas ─» bibliotek─ů
 J┼źs┼│ IP adresas:
54.166.188.64
 Vardas:
 Slapta┼żodis:

Pri─Śjimo taisykl─Śs
Registracija
U┼żmir┼íote slapta┼żod─»?
Interfeisas
Kontaktai
 El. pa┼ítas:
info@elibrary.lt
 Telefonas:
+370 5 248-1536
 Mobilus:
+370 699 16-184
 Pa┼íto adresas:
┼Żemait─Śs g. 21, 3 ─»─Śjimas,
LT-03118, Vilnius
 Serveri┼│ adresai:
http://elibrary.lt
http://e-library.lt
http://ebiblioteka.lt
http://e-biblioteka.lt
 Administratorius:
editor@elibrary.lt
Autorin─Śs teis─Śs
Skaitikliai
 CQ Counter:


   El. pa┼ítas: info@elibrary.lt     Tel.: (+370 5) 248-1536     Fax: (+370 5) 248-1629   
e-LIBRARY

2005 m. Nr.6

Eil. Nr. Dokument┼│ s─ůra┼ías I┼ísaugoti
1 Academician Juras Po┼żela, the founder of a Scientific School of Semiconductor Physics in Lithuania, has turned 80 years of age. S. A┼ímontas and J. Vaitkus
2 Microwave radiation and X-ray-induced phenomena in semiconductors. S. A┼ímontas, A. Laurinavi─Źius, J. Pauk┼ít─Ś, and A. ┼áil─Śnas
3 CERN Large Hadron Collider projects to improve the radiation hardness of ionizing radiation detectors: The role and control of defects in Si and potential of GaN. J. Vaitkus, A. Blue, W. Cunningham, E. Gaubas, J. Grant, K. Jara┼íi┼źnas, A. Kadys, V. Kalendra, V. Ka┼żukauskas, P. Pobedinskas, V. OÔÇÖShea, K. Smith, J. Storasta, and A. ┼Żukauskas
4 Enhancement of electron saturated drift velocity in a quantum well by confinement of polar optical phonons. J. Po┼żela, K. Po┼żela, and V. Jucien─Ś
5 The introduction of quantum electronic structures for MEMS devices. H.L. Hartnagel
6 An analytical treatment of the delayed feedback control algorithm at a subcritical Hopf bifurcation. Vikt. Pyragas and K. Pyragas
7 Numerical modelling of the electric field in the semiconductor obstacle placed in the coaxial line. ┼Ż. Kancleris, V. Tamo┼íi┼źnas, and M. Tamo┼íi┼źnien─Ś
8 Noise measurements of InGaAsP / InP laser diodes near the threshold current. E. ┼áermuk┼ínis, V. Palenskis, J. Matukas, S. Pralgauskait─Ś, J. Vy┼íniauskas, K. Vizbaras, and R. Baubinas
9 Drift velocity measurement and hot electron capture in AlGaN/AlN/GaN. O. Kiprijanovi─Ź, A. Matulionis, J. Liberis, and L. Ardaravi─Źius
10 Hot electron dynamics and optical nonlinearities in non-uniformly excited indium phosphide. L. Suba─Źius, I. Ka┼íalynas, M. Vingelis, and K. Jara┼íi┼źnas
11 Effect of high-energy protons on 4H-SiC radiation detectors. V. Ka┼żukauskas, R. Jasiulionis, V. Kalendra, and J.-V. Vaitkus
12 Excess carrier decay peculiarities caused by disorder in dislocation-rich SiGe and GaN layered structures. E. Gaubas, A. Aleknavi─Źius, M. Bau┼ża, and A. Uleckas
13 Development of Lithuanian physics in the second half of the 20th century: Statistical analysis. R. Karazija, A. Momkauskait─Ś, and R. Kivil┼íien─Ś